? 2003 ixys all rights reserved v dss = 250 v i d(cont) = 60 a r ds(on) = 46m ? ? ? ? ? advance technical information symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125c 250 a r ds(on) v gs = 10 v, i d = 15a 46 m ? pulse test, t 300 ms, duty cycle d 2% features ? low r ds (on) hdmos tm process rugged polysilicon gate cell structure international standard package jedec to-247 ad fast switching times high commutating dv/dt rating applications motor controls dc choppers switched-mode and resonant-mode power supplies uninterruptible power supplies (ups) advantages easy to mount with one screw (isolated mounting screw hole) space savings high power density ds99010a(05/03) standard power mosfet n-channel enhancement mode symbol test conditions maximum ratings v dss t j = 25c to 150c 250 v v dgr t j = 25c to 150c; r gs = 1.0 m ? 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c mosfet chip capability 60 a i dm t c = 25 c, pulse width limited by t jm 240 a i ar 60 a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight (to-247) 6 g (to-268) 4 g g = gate d = drain s = source tab = drain maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ixth 60n25 ixtt 60n25 to-247 ad (ixth) g d s d (tab) g s c (tab) to-268 (ixtt) 300 c
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 28 36 s c iss 4400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 800 pf c rss 290 pf t d(on) 23 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 23 ns t d(off) r g = 2.0 ? (external) 60 ns t f 17 ns q g(on) 164 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 nc q gd 85 nc r thjc 0.31 k/w r thck (to-247) 0.25 k/w source-drain diode ratings and characteristics (t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 60 a i sm repetitive; pulse width limited by t jm 240 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/s, v r = 100v 300 ns q rr 3.0 c ixth 60n25 ixtt 60n25 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline min recommended footprint
? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 10 0 12 5 15 0 02 46 810 v ds - volts i d - amperes v gs = 1 0v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 0 1234567 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.5 1 1. 5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalize d i d = 60a i d = 30a v gs = 1 0v fig. 6. drain current vs. case t emperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c - degr ees centigr ade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.6 1 1. 4 1. 8 2.2 2.6 3 3.4 0306090120150 i d - amperes r ds(on) - normalize d t j = 1 25oc t j = 25oc v gs = 1 0v ixth 60n25 ixtt 60n25
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 11. capacitance 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 3060 90120150180 q g - nanocoulombs v gs - volts v ds = 1 25v i d =30a i g = 1 0ma fig. 7. input admittance 0 20 40 60 80 10 0 12 0 4 4.5 5 5.5 6 6.5 7 7.5 8 v gs - volts i d - amperes t j = -40oc 25oc 1 25oc fig. 12. maximum t ransient t hermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th)jc - (oc/w) fig. 8. t ransconductance 0 15 30 45 60 75 0 30 60 90 120 150 180 i d - amperes g fs - siemens t j = -40oc 25oc 1 25oc fig. 9. source current vs. source-to-drain voltage 0 30 60 90 12 0 15 0 18 0 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 1 25oc t j = 25oc ixth 60n25 ixtt 60n25
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